Other articles related with "stress-induced leakage current":
87304 Yanrong Wang(王艳蓉), Hong Yang(杨红), Hao Xu(徐昊), Weichun Luo(罗维春), Luwei Qi(祁路伟), Shuxiang Zhang(张淑祥), Wenwu Wang(王文武), Jiang Yan(闫江), Huilong Zhu(朱慧珑), Chao Zhao(赵超), Dapeng Chen(陈大鹏), Tianchun Ye(叶甜春)
  Stress-induced leakage current characteristics of PMOS fabricated by a new multi-deposition multi-annealing technique with full gate last process
    Chin. Phys. B   2017 Vol.26 (8): 87304-087304 [Abstract] (813) [HTML 1 KB] [PDF 1310 KB] (238)
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